The Effect Of Nitrogen Plasma Damage on AlGaAs/GaAs Heterojunction Biplor Transistors

碩士 === 逢甲大學 === 化學工程學系 === 89 === AlGaAs/GaAs heterojunction bipolar transistors (HBTs) are broadly used in wireless and mobile telecommunication system. Since they have the advantages of small die size、high power density、high operating frequency and high operating temperature....

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Bibliographic Details
Main Authors: Wu Hsiu Fan, 吳秀凡
Other Authors: Chien-Hsing Hsu
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/88243203783693995868