| Summary: | 碩士 === 逢甲大學 === 電機工程學系 === 89 === Abstract
In our study, the barrier properties for TaNx on CoSi2 in copper metallization were investigated.
First, the properties of TaNx with different nitrogen low rate deposited on CoSi2 by using Reactive Sputter were studied. It was investigated that the phase changes of TaNx deposited by increasing N2 flow rate and with the sequence listed as follows: β-Ta, α-Ta, α-Ta(-N), and TaN. Because of copper was directly deposited on CoSi2, the CoSi2 can stop the copper diffusion at 2000C. After annealing at 300oC, the device characteristics were degenerated by copper diffusion.
The TaN with the nitrogen flow rate less than 10% deposited on CoSi2 can stop copper diffusion without degenerated until 5000C. And the TaN with the nitrogen flow rate above 10% deposited on CoSi2 can stop copper diffusion without degenerated until 6000C. In the results, the TaN with the N2 flow rate above 10% deposited on CoSi2 had better ability of anti-copper-diffusion.
The TaN with 5% N2 flow rate deposited on Si had best anti-diffusion properties and TaN with N2 flow rate above 10% deposited on CoSi2 had best anti-diffusion properties. The Sputtered TaNx had different anti-diffusion properties deposited on Si and CoSi2.
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