Integration of Copper Interconnection and Cobalt Silicided Junctions
碩士 === 逢甲大學 === 電機工程學系 === 89 === Abstract In our study, the barrier properties for TaNx on CoSi2 in copper metallization were investigated. First, the properties of TaNx with different nitrogen low rate deposited on CoSi2 by using Reactive Sputter were studied. It w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58547438000055311303 |