The Study of Temperature Dependence of Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor and Thermal Parameter Extraction
碩士 === 國立成功大學 === 電機工程學系 === 89 === Recent advances in communication, radar and computational systems demand very high performance electronic circuit. Heterojunction bipolar transistors (HBTs) have potential of providing a more efficient solution to many key system requirements through in...
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ndltd-TW-089NCKU04420762016-01-29T04:27:55Z http://ndltd.ncl.edu.tw/handle/22171552929069507220 The Study of Temperature Dependence of Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor and Thermal Parameter Extraction 砷化鋁鎵/砷化鎵異質接面雙載子電晶體其特性對溫度的相關性之研究與熱阻參數萃取 Li-Hsin Chang 張立欣 碩士 國立成功大學 電機工程學系 89 Recent advances in communication, radar and computational systems demand very high performance electronic circuit. Heterojunction bipolar transistors (HBTs) have potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. HBTs have also shown great potential both for microwave power and low-voltage applications. Many applications will require HBTs transistor to operate above ambient temperature due to high power density and poor thermal conductivity of GaAs substrate. In this thesis, the temperature dependence of current gain is investigated for GaAs-base HBT. The thermionic- emission current plays an important role for the hole current, which results in a negative temperature coefficient for current gain. The dependence of the collector-emitter offset voltage (Voffset) on the base current, substrate temperature. We found that Voffset decreases at moderate base current, and begins to increase at very high IB. Moreover, Voffset increases linearly with the temperature. Under high self-heating operating conditions, a technique is presented that can directly extract the mean device junction and thermal impedance. The method uses three trivial dc measurements of the device where the junction temperature is known to be the same. Result show that the thermal impedance varied with both ambient temperature and power dissipation at high junction temperature. Yan-Kuin Su 蘇炎坤 2001 學位論文 ; thesis 80 en_US |
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碩士 === 國立成功大學 === 電機工程學系 === 89 === Recent advances in communication, radar and computational systems demand very high performance electronic circuit. Heterojunction bipolar transistors (HBTs) have potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. HBTs have also shown great potential both for microwave power and low-voltage applications.
Many applications will require HBTs transistor to operate above ambient temperature due to high power density and poor thermal conductivity of GaAs substrate. In this thesis, the temperature dependence of current gain is investigated for GaAs-base HBT. The thermionic- emission current plays an important role for the hole current, which results in a negative temperature coefficient for current gain.
The dependence of the collector-emitter offset voltage (Voffset) on the base current, substrate temperature. We found that Voffset decreases at moderate base current, and begins to increase at very high IB. Moreover, Voffset increases linearly with the temperature.
Under high self-heating operating conditions, a technique is presented that can directly extract the mean device junction and thermal impedance. The method uses three trivial dc measurements of the device where the junction temperature is known to be the same. Result show that the thermal impedance varied with both ambient temperature and power dissipation at high junction temperature.
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author2 |
Yan-Kuin Su |
author_facet |
Yan-Kuin Su Li-Hsin Chang 張立欣 |
author |
Li-Hsin Chang 張立欣 |
spellingShingle |
Li-Hsin Chang 張立欣 The Study of Temperature Dependence of Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor and Thermal Parameter Extraction |
author_sort |
Li-Hsin Chang |
title |
The Study of Temperature Dependence of Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor and Thermal Parameter Extraction |
title_short |
The Study of Temperature Dependence of Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor and Thermal Parameter Extraction |
title_full |
The Study of Temperature Dependence of Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor and Thermal Parameter Extraction |
title_fullStr |
The Study of Temperature Dependence of Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor and Thermal Parameter Extraction |
title_full_unstemmed |
The Study of Temperature Dependence of Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor and Thermal Parameter Extraction |
title_sort |
study of temperature dependence of characteristics of algaas/gaas heterojunction bipolar transistor and thermal parameter extraction |
publishDate |
2001 |
url |
http://ndltd.ncl.edu.tw/handle/22171552929069507220 |
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