Fabrication and Characteristics of Film Type Bulk Acoustic Wave Resonator (FBAR)

碩士 === 國立成功大學 === 電機工程學系 === 89 === This paper reports on a film type bulk acoustic wave resonator (FBAR) fabricated by lithography, etching and RF magnetron sputtering of aluminum nitride (AlN) films. The fabricated resonator consists of five layers. Manufacturing FBAR device involves a...

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Bibliographic Details
Main Authors: Hung-Da,Huang, 黃宏達
Other Authors: Long Wu
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/32530795304153166496