CMOS Low-Voltage Dual-Band Mixer
碩士 === 國立成功大學 === 電機工程學系 === 89 === Abstract Mixer has been widely used in many communication systems, especially in superheterodyne architecture. In modern communication systems, however, dual-band systems are popular, because mobile telephones are highly available and the con...
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ndltd-TW-089NCKU04421412016-01-29T04:27:55Z http://ndltd.ncl.edu.tw/handle/56173793573324828410 CMOS Low-Voltage Dual-Band Mixer 互補式金氧半導體低電壓雙頻混波器 Fu-Tsun Sun 孫福村 碩士 國立成功大學 電機工程學系 89 Abstract Mixer has been widely used in many communication systems, especially in superheterodyne architecture. In modern communication systems, however, dual-band systems are popular, because mobile telephones are highly available and the consumers require good communication quality. The purpose of this thesis is to investigate a mixer working at dual-band frequency. The concept is to improve original Gilbert mixer for low-voltage supply. By using dual-band frequency resonators, both bands can be mixed, and just use one mixer circuit. The proposed mixer is fabricated with TSMC 0.35 um sp/4m process. The Chip die size is about 3*3 mm2. When testing, RF signal is swept from 0.5 GHz to 2.2 GHz in 100 MHz step. The LO frequency is varied with RF frequency so the IF is fired at 100 MHz. Chih-Ming Tsai 蔡智明 2001 學位論文 ; thesis 91 en_US |
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碩士 === 國立成功大學 === 電機工程學系 === 89 === Abstract
Mixer has been widely used in many communication systems, especially in superheterodyne architecture. In modern communication systems, however, dual-band systems are popular, because mobile telephones are highly available and the consumers require good communication quality.
The purpose of this thesis is to investigate a mixer working at dual-band frequency. The concept is to improve original Gilbert mixer for low-voltage supply. By using dual-band frequency resonators, both bands can be mixed, and just use one mixer circuit.
The proposed mixer is fabricated with TSMC 0.35 um sp/4m process. The Chip die size is about 3*3 mm2. When testing, RF signal is swept from 0.5 GHz to 2.2 GHz in 100 MHz step. The LO frequency is varied with RF frequency so the IF is fired at 100 MHz.
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Chih-Ming Tsai |
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Chih-Ming Tsai Fu-Tsun Sun 孫福村 |
author |
Fu-Tsun Sun 孫福村 |
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Fu-Tsun Sun 孫福村 CMOS Low-Voltage Dual-Band Mixer |
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Fu-Tsun Sun |
title |
CMOS Low-Voltage Dual-Band Mixer |
title_short |
CMOS Low-Voltage Dual-Band Mixer |
title_full |
CMOS Low-Voltage Dual-Band Mixer |
title_fullStr |
CMOS Low-Voltage Dual-Band Mixer |
title_full_unstemmed |
CMOS Low-Voltage Dual-Band Mixer |
title_sort |
cmos low-voltage dual-band mixer |
publishDate |
2001 |
url |
http://ndltd.ncl.edu.tw/handle/56173793573324828410 |
work_keys_str_mv |
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