CMOS Low-Voltage Dual-Band Mixer

碩士 === 國立成功大學 === 電機工程學系 === 89 === Abstract Mixer has been widely used in many communication systems, especially in superheterodyne architecture. In modern communication systems, however, dual-band systems are popular, because mobile telephones are highly available and the con...

Full description

Bibliographic Details
Main Authors: Fu-Tsun Sun, 孫福村
Other Authors: Chih-Ming Tsai
Format: Others
Language:en_US
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/56173793573324828410
id ndltd-TW-089NCKU0442141
record_format oai_dc
spelling ndltd-TW-089NCKU04421412016-01-29T04:27:55Z http://ndltd.ncl.edu.tw/handle/56173793573324828410 CMOS Low-Voltage Dual-Band Mixer 互補式金氧半導體低電壓雙頻混波器 Fu-Tsun Sun 孫福村 碩士 國立成功大學 電機工程學系 89 Abstract Mixer has been widely used in many communication systems, especially in superheterodyne architecture. In modern communication systems, however, dual-band systems are popular, because mobile telephones are highly available and the consumers require good communication quality. The purpose of this thesis is to investigate a mixer working at dual-band frequency. The concept is to improve original Gilbert mixer for low-voltage supply. By using dual-band frequency resonators, both bands can be mixed, and just use one mixer circuit. The proposed mixer is fabricated with TSMC 0.35 um sp/4m process. The Chip die size is about 3*3 mm2. When testing, RF signal is swept from 0.5 GHz to 2.2 GHz in 100 MHz step. The LO frequency is varied with RF frequency so the IF is fired at 100 MHz. Chih-Ming Tsai 蔡智明 2001 學位論文 ; thesis 91 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立成功大學 === 電機工程學系 === 89 === Abstract Mixer has been widely used in many communication systems, especially in superheterodyne architecture. In modern communication systems, however, dual-band systems are popular, because mobile telephones are highly available and the consumers require good communication quality. The purpose of this thesis is to investigate a mixer working at dual-band frequency. The concept is to improve original Gilbert mixer for low-voltage supply. By using dual-band frequency resonators, both bands can be mixed, and just use one mixer circuit. The proposed mixer is fabricated with TSMC 0.35 um sp/4m process. The Chip die size is about 3*3 mm2. When testing, RF signal is swept from 0.5 GHz to 2.2 GHz in 100 MHz step. The LO frequency is varied with RF frequency so the IF is fired at 100 MHz.
author2 Chih-Ming Tsai
author_facet Chih-Ming Tsai
Fu-Tsun Sun
孫福村
author Fu-Tsun Sun
孫福村
spellingShingle Fu-Tsun Sun
孫福村
CMOS Low-Voltage Dual-Band Mixer
author_sort Fu-Tsun Sun
title CMOS Low-Voltage Dual-Band Mixer
title_short CMOS Low-Voltage Dual-Band Mixer
title_full CMOS Low-Voltage Dual-Band Mixer
title_fullStr CMOS Low-Voltage Dual-Band Mixer
title_full_unstemmed CMOS Low-Voltage Dual-Band Mixer
title_sort cmos low-voltage dual-band mixer
publishDate 2001
url http://ndltd.ncl.edu.tw/handle/56173793573324828410
work_keys_str_mv AT futsunsun cmoslowvoltagedualbandmixer
AT sūnfúcūn cmoslowvoltagedualbandmixer
AT futsunsun hùbǔshìjīnyǎngbàndǎotǐdīdiànyāshuāngpínhùnbōqì
AT sūnfúcūn hùbǔshìjīnyǎngbàndǎotǐdīdiànyāshuāngpínhùnbōqì
_version_ 1718170293920333824