| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 89 === Due to great flourish of wireless communications, radio-frequency integrated circuits (RF IC’s) are becoming more in demand. The majority of RF IC’s are typically implemented in GaAs or silicon bipolar technologies because of their relative-ly high unity current gain cutoff frequency. Comparably, with the progress in process technology and device design of the MOS transistors, the continuing scaling down of the minimum channel length has given rise to the increasing cutoff frequency. As a consequence, the CMOS devices start to emerge in the components of RF IC’s. However, the implementation that takes full advan-tage of the RF performance of the CMOS transistors is still a challenging task. The major barrier to realization of commer-cial RF CMOS components is the lack of adequate models, parti-cularly the noise model, which accurately predict the device behavior at high frequencies.
The main concern for this work will focus on the derivation of noise within MOS devices. Rather than constructing an analy-tical noise model, the simulation task is performed directly through numerical calculation. The adopted method inherently takes into account all the microscopic noise sources within the transistors at radio frequencies. A by-product, so-called the Green’s function, is evaluated through an innovative techni-que, i.e. associated with the concept of y-parameter under AC small-signal analysis. Since the noise model of MOS devices is inadequate at high frequency, the numerical simulation will be able to achieve a far better insight on the nature and the ori-gin of noise for the devices. It should be declared that the thorough simulation task is implemented into the framework of 2D device simulator TMA Medici.
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