Fabrication and Characterization of Epitaxial GaSe Thin Films by Pulsed Laser Deposition
碩士 === 國立交通大學 === 光電工程所 === 89 === We have successfully fabricated highly oriented (00l) GaSe film on c-cut sapphire (0001) by pulsed laser deposition which posses a hexagonal and layered structure with a grain size about 572 Å determined by X-ray diffraction (XRD). We also observed phas...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/08106341263451182156 |