ITO Ohmic Contact on Ternary ZnSxSe1-x Epilayers Prepared by LP-OMVPE
碩士 === 國立中山大學 === 電機工程學系研究所 === 89 === ABSTRACT High quality ZnS0.06Se0.94 epilayer which was lattice-matched to GaAs substrate has been prepared. The sulfur composition x was 0.06 has been determined by EPMA. The FWHM of X-ray diffraction was 187.2 arcsec. Its R-value was 5.191%. High quality Z...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58268390126247422559 |