| Summary: | 碩士 === 國立清華大學 === 材料科學工程學系 === 89 === Abstract
This study is to observe effects of titanium element doping on the microstructures and physical properties of germanium- antimony alloy films.
All films,（GeSb9）1-XTiX（X≦7.5at.%）, were deposited with DC magnetron sputtering. Transmission electron microscopy （TEM）observation implied that the grain sizes reduced with the Ti concentration. X-ray diffraction was applied to identify phases of the films, and only diffraction peaks of Sb were observed within sensitivity of instrument. In addition, the diffraction peaks intensity decreased with Ti concentration. After Ti element doping, the crystallization temperatures raised with Ti concentration and are greater than 200℃ for all samples observed. The crystallization activation energy raised abruptly after a small amount of Ti element doping（X≦1.1at.%）, but decreased afterward as Ti concentration kept increasing. At short wavelengths（420nm and 460nm）, the optical reflection contrasts are lower than 20﹪.
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