Research of a Novel Ka-band High Power Extended Interaction Amplifier

博士 === 國立清華大學 === 物理學系 === 89 === In this dissertation, we study two different types of extended interaction amplifiers (EIA). They both have the same type of output port, a hybrid microwave tube, assembled by extended interaction cavity (EIC); but with different bunchers: one is cluster cavity and...

Full description

Bibliographic Details
Main Authors: Cheng, Fu-Hsing, 鄭復興
Other Authors: Chu, Kwo-Ray
Format: Others
Language:zh-TW
Published: 2001
Online Access:http://ndltd.ncl.edu.tw/handle/12487307094192648676
Description
Summary:博士 === 國立清華大學 === 物理學系 === 89 === In this dissertation, we study two different types of extended interaction amplifiers (EIA). They both have the same type of output port, a hybrid microwave tube, assembled by extended interaction cavity (EIC); but with different bunchers: one is cluster cavity and the other is extended interaction cavity. We explain the operation theories of those structures, and discuss their effects to the efficiency and the bandwidth. We expect to get a significantly enhancing efficiency in the bandwidth by adding severl bunchers, because electron beams with stronger bunching can transfer their energy more efficiently. We also expect to get better performance of the efficiency, bandwidth, and gain because of the EIC output port with high characteristic impedance(R/Q). The experimental results show that when the operation frequency is 28.125GHz, we can get the output power 336 W, the gain of small signal 57 dB, the saturated gain 46dB, and efficiency 16﹪in 3dB-bandwidth 60MHz. If we also take the effect of collecting into consideration, the overall efficiency can reach 21﹪.