Fring-Induced-Barrier-Lowing (FIBL) Effect in Sub-100nm MOSFETs with High-K Gate Dielectric
碩士 === 國立清華大學 === 電子工程研究所 === 89 === Recently studies have shown that by adapting high-K gate dielectric, deep sub-micron MOSFET suffers short channel effect caused by the fringing electric fields from gate to source/drain regions. In this work, a simulation-based analysis of multiple gate stack str...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78662439143566566244 |