Study for nano-structure of II-VI Semiconductor
碩士 === 淡江大學 === 物理學系 === 89 === In this paper , we study the best growth condition of Zn1-xCdxSe/ZnCd multi-quantum well by the Hot-Wall Epitaxial system. First we study the optimal washing condition for the substrate , the grow the ZnSe films by fix the growth temperature , at different substrate t...
Main Authors: | , |
---|---|
Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2001
|
Online Access: | http://ndltd.ncl.edu.tw/handle/37156253411605999607 |
id |
ndltd-TW-089TKU00198013 |
---|---|
record_format |
oai_dc |
spelling |
ndltd-TW-089TKU001980132015-10-13T12:10:01Z http://ndltd.ncl.edu.tw/handle/37156253411605999607 Study for nano-structure of II-VI Semiconductor II-VI族半導體奈米結構製作研究 CHANG SHENG-CHIEH 張勝傑 碩士 淡江大學 物理學系 89 In this paper , we study the best growth condition of Zn1-xCdxSe/ZnCd multi-quantum well by the Hot-Wall Epitaxial system. First we study the optimal washing condition for the substrate , the grow the ZnSe films by fix the growth temperature , at different substrate temperature , Use the microscopy , X-Ray diffraction , and Photoluminescence(PL) to analyse the quality of films , we obtain the best substrate temperature. Next by fix the substrate temperature , we grow the film and change the growth temperature , then analyse the quality of films , we obtain the best growth temperature. To study the influence of annealing on the film , first we fix the annealing time at 3 min on different annealing temperature , and use PL to determine the best annealing temperature . Then we fix annealing temperature on different annealing time to the sample , and use PL to get the best annealing time . After the study of annealing , we add a step of annealing in epitaxial processes . We use these growth condition to growth Zn1-xCdxSe/ZnCd multi-quantum well , and use X-Ray diffraction , PL to analyse the quality of sample , use these condition , we can make the better quantum well sample . J. Y Jen 鄭振益 2001 學位論文 ; thesis 75 zh-TW |
collection |
NDLTD |
language |
zh-TW |
format |
Others
|
sources |
NDLTD |
description |
碩士 === 淡江大學 === 物理學系 === 89 === In this paper , we study the best growth condition of Zn1-xCdxSe/ZnCd multi-quantum well by the Hot-Wall Epitaxial system. First we study the optimal washing condition for the substrate , the grow the ZnSe films by fix the growth temperature , at different substrate temperature , Use the microscopy , X-Ray diffraction , and Photoluminescence(PL) to analyse the quality of films , we obtain the best substrate temperature.
Next by fix the substrate temperature , we grow the film and change the growth temperature , then analyse the quality of films , we obtain the best growth temperature.
To study the influence of annealing on the film , first we fix the annealing time at 3 min on different annealing temperature , and use PL to determine the best annealing temperature . Then we fix annealing temperature on different annealing time to the sample , and use PL to get the best annealing time .
After the study of annealing , we add a step of annealing in epitaxial processes . We use these growth condition to growth Zn1-xCdxSe/ZnCd multi-quantum well , and use X-Ray diffraction , PL to analyse the quality of sample , use these condition , we can make the better quantum well sample .
|
author2 |
J. Y Jen |
author_facet |
J. Y Jen CHANG SHENG-CHIEH 張勝傑 |
author |
CHANG SHENG-CHIEH 張勝傑 |
spellingShingle |
CHANG SHENG-CHIEH 張勝傑 Study for nano-structure of II-VI Semiconductor |
author_sort |
CHANG SHENG-CHIEH |
title |
Study for nano-structure of II-VI Semiconductor |
title_short |
Study for nano-structure of II-VI Semiconductor |
title_full |
Study for nano-structure of II-VI Semiconductor |
title_fullStr |
Study for nano-structure of II-VI Semiconductor |
title_full_unstemmed |
Study for nano-structure of II-VI Semiconductor |
title_sort |
study for nano-structure of ii-vi semiconductor |
publishDate |
2001 |
url |
http://ndltd.ncl.edu.tw/handle/37156253411605999607 |
work_keys_str_mv |
AT changshengchieh studyfornanostructureofiivisemiconductor AT zhāngshèngjié studyfornanostructureofiivisemiconductor AT changshengchieh iivizúbàndǎotǐnàimǐjiégòuzhìzuòyánjiū AT zhāngshèngjié iivizúbàndǎotǐnàimǐjiégòuzhìzuòyánjiū |
_version_ |
1716854722797764608 |