Study for nano-structure of II-VI Semiconductor

• Main Authors: CHANG SHENG-CHIEH, 張勝傑
• Other Authors: J. Y Jen
• Format: Others
• Language: zh-TW
• Published: 2001
• Online Access: http://ndltd.ncl.edu.tw/handle/37156253411605999607

碩士 === 淡江大學 === 物理學系 === 89 === In this paper , we study the best growth condition of Zn1-xCdxSe/ZnCd multi-quantum well by the Hot-Wall Epitaxial system. First we study the optimal washing condition for the substrate , the grow the ZnSe films by fix the growth temperature , at different substrate temperature , Use the microscopy , X-Ray diffraction , and Photoluminescence(PL) to analyse the quality of films , we obtain the best substrate temperature. Next by fix the substrate temperature , we grow the film and change the growth temperature , then analyse the quality of films , we obtain the best growth temperature. To study the influence of annealing on the film , first we fix the annealing time at 3 min on different annealing temperature , and use PL to determine the best annealing temperature . Then we fix annealing temperature on different annealing time to the sample , and use PL to get the best annealing time . After the study of annealing , we add a step of annealing in epitaxial processes . We use these growth condition to growth Zn1-xCdxSe/ZnCd multi-quantum well , and use X-Ray diffraction , PL to analyse the quality of sample , use these condition , we can make the better quantum well sample .