The valence-band photoemission studies of N- and B-doped diamond films
碩士 === 淡江大學 === 物理學系 === 89 === We present the photoemission study of nitrogen (N) and boron (B) containing diamond film at room temperature. Diamond films were grown on silicon (Si) substrates by the microwave plasma-enhanced chemical vapor deposition method (MPECVD). The valence-band ph...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2001
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35896638768375262920 |
| Summary: | 碩士 === 淡江大學 === 物理學系 === 89 === We present the photoemission study of nitrogen (N) and boron (B) containing diamond film at room temperature. Diamond films were grown on silicon (Si) substrates by the microwave plasma-enhanced chemical vapor deposition method (MPECVD). The valence-band photoelectron spectra (PES) indicate that N and B atoms cause the broadening of the valence band π- and σ-bond features and the enhancement and reduction of the π- and σ-bond features, respectively. We also found that N- and B-doping induced partial graphitization in some small regions in the diamond films and enhanced the occupied sp3-bond states of the host atoms surrounding the N and B impurities.
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