Tension Simulation of Nanoscopic Thin Film with Vacancies Using Atomic Model

碩士 === 國立中正大學 === 機械系 === 90 === Thin films are being widely used in various fields such as sensors, semiconductor, and tribology. Due to the development of the nanotechnology, the applications of nanoscopic thin film increase rapidly. The most fundamental mechanical properties of the thi...

Full description

Bibliographic Details
Main Author: 李志遠
Other Authors: Yeau-Ren Jeng
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/48713431894326013486
id ndltd-TW-090CCU00489039
record_format oai_dc
spelling ndltd-TW-090CCU004890392015-10-13T17:34:58Z http://ndltd.ncl.edu.tw/handle/48713431894326013486 Tension Simulation of Nanoscopic Thin Film with Vacancies Using Atomic Model 使用原子模型之有限單元法探討具空孔缺陷之奈米薄膜的拉伸變形機制 李志遠 碩士 國立中正大學 機械系 90 Thin films are being widely used in various fields such as sensors, semiconductor, and tribology. Due to the development of the nanotechnology, the applications of nanoscopic thin film increase rapidly. The most fundamental mechanical properties of the thin film, which are defined on the precepts of continuum mechanics, are assumed to be independent of size. However, with a nanoscale dimension, that the properties of a material depend on the size of the system is commonly expected and observed. Obviously, the physical properties of the bulk cannot be applied to the thin film with the nanometer dimension in the thickness. Furthermore, the nature of this size dependence will further depend on the material in question. MD simulation is the main simulation method from the molecular point of view. Molecular dynamics has wide applicability such that it can simulate, in principle, at least, the phenomena at a molecular level. However, it is very time consuming due to the high time resolution smaller than at least a pico-second. In this study, instead of MD simulation, alternative approach based on the fact that in condensed systems, atoms or molecules always oscillate around the minimum-energy positions was used. The computation in this way is quasi-static, thereby greatly reducing the computing time. This study investigated the effects of vacancies on the mechanical behaviors of nanoscopic thin film of copper. The interactions of atoms are dealt with Morse’s potential function. The results show that the pre-stress in microscopic world shouldn’t be ignored because the stress is not zero while the strain is zero. The results also show that the Young’s modulus of nanoscopic thin film decreases with increasing vacancies. Young’s modulus decreases while the thickness of thin film is decreasing. The analysis of the distribution of stress-strain shows that the stress near the free surfaces decreases while the thickness of thin film decrease. This is an indication that the mechanical properties of a nanoscopic material depend on the size. Yeau-Ren Jeng 鄭友仁 2002 學位論文 ; thesis 118 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立中正大學 === 機械系 === 90 === Thin films are being widely used in various fields such as sensors, semiconductor, and tribology. Due to the development of the nanotechnology, the applications of nanoscopic thin film increase rapidly. The most fundamental mechanical properties of the thin film, which are defined on the precepts of continuum mechanics, are assumed to be independent of size. However, with a nanoscale dimension, that the properties of a material depend on the size of the system is commonly expected and observed. Obviously, the physical properties of the bulk cannot be applied to the thin film with the nanometer dimension in the thickness. Furthermore, the nature of this size dependence will further depend on the material in question. MD simulation is the main simulation method from the molecular point of view. Molecular dynamics has wide applicability such that it can simulate, in principle, at least, the phenomena at a molecular level. However, it is very time consuming due to the high time resolution smaller than at least a pico-second. In this study, instead of MD simulation, alternative approach based on the fact that in condensed systems, atoms or molecules always oscillate around the minimum-energy positions was used. The computation in this way is quasi-static, thereby greatly reducing the computing time. This study investigated the effects of vacancies on the mechanical behaviors of nanoscopic thin film of copper. The interactions of atoms are dealt with Morse’s potential function. The results show that the pre-stress in microscopic world shouldn’t be ignored because the stress is not zero while the strain is zero. The results also show that the Young’s modulus of nanoscopic thin film decreases with increasing vacancies. Young’s modulus decreases while the thickness of thin film is decreasing. The analysis of the distribution of stress-strain shows that the stress near the free surfaces decreases while the thickness of thin film decrease. This is an indication that the mechanical properties of a nanoscopic material depend on the size.
author2 Yeau-Ren Jeng
author_facet Yeau-Ren Jeng
李志遠
author 李志遠
spellingShingle 李志遠
Tension Simulation of Nanoscopic Thin Film with Vacancies Using Atomic Model
author_sort 李志遠
title Tension Simulation of Nanoscopic Thin Film with Vacancies Using Atomic Model
title_short Tension Simulation of Nanoscopic Thin Film with Vacancies Using Atomic Model
title_full Tension Simulation of Nanoscopic Thin Film with Vacancies Using Atomic Model
title_fullStr Tension Simulation of Nanoscopic Thin Film with Vacancies Using Atomic Model
title_full_unstemmed Tension Simulation of Nanoscopic Thin Film with Vacancies Using Atomic Model
title_sort tension simulation of nanoscopic thin film with vacancies using atomic model
publishDate 2002
url http://ndltd.ncl.edu.tw/handle/48713431894326013486
work_keys_str_mv AT lǐzhìyuǎn tensionsimulationofnanoscopicthinfilmwithvacanciesusingatomicmodel
AT lǐzhìyuǎn shǐyòngyuánzimóxíngzhīyǒuxiàndānyuánfǎtàntǎojùkōngkǒngquēxiànzhīnàimǐbáomódelāshēnbiànxíngjīzhì
_version_ 1717782225407180800