| Summary: | 碩士 === 大葉大學 === 電機工程研究所 === 90 === ABSTRACT
This work studies mainly on the computation of double quantum well in Silicon-Germanium (Si(1-x)Ge(x)) compound with numerical method and model-solid theory.Because of the hetero-structure interface and lattice constant mismatch between these two elements, there is induced strain in the Ge(x)Si(1-x) layer, which can be adjusted through different concentration (X) and the well width to produce a 4-level system.
By using this 4-level system, it is possible to produce tera-hertz radiation emission, which is important for practical application in Optical Engineerings.
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