The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method

碩士 === 大葉大學 === 電機工程研究所 === 90 === ABSTRACT This work studies mainly on the computation of double quantum well in Silicon-Germanium (Si(1-x)Ge(x)) compound with numerical method and model-solid theory.Because of the hetero-structure interface and lattice constant mismatch be...

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Main Authors:	Liu Chang-Chieh, 劉昌杰
Other Authors:	韓斌
Format:	Others
Language:	zh-TW
Published:	2002
Online Access:	http://ndltd.ncl.edu.tw/handle/79918270965098710901

id	ndltd-TW-090DYU00442045
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spelling	ndltd-TW-090DYU004420452015-10-13T17:39:42Z http://ndltd.ncl.edu.tw/handle/79918270965098710901 The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method 以數值方法計算矽鍺半導體之雙量子井結構 Liu Chang-Chieh 劉昌杰碩士大葉大學電機工程研究所 90 ABSTRACT This work studies mainly on the computation of double quantum well in Silicon-Germanium (Si(1-x)Ge(x)) compound with numerical method and model-solid theory.Because of the hetero-structure interface and lattice constant mismatch between these two elements, there is induced strain in the Ge(x)Si(1-x) layer, which can be adjusted through different concentration (X) and the well width to produce a 4-level system. By using this 4-level system, it is possible to produce tera-hertz radiation emission, which is important for practical application in Optical Engineerings. 韓斌 2002 學位論文 ; thesis 50 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 大葉大學 === 電機工程研究所 === 90 === ABSTRACT This work studies mainly on the computation of double quantum well in Silicon-Germanium (Si(1-x)Ge(x)) compound with numerical method and model-solid theory.Because of the hetero-structure interface and lattice constant mismatch between these two elements, there is induced strain in the Ge(x)Si(1-x) layer, which can be adjusted through different concentration (X) and the well width to produce a 4-level system. By using this 4-level system, it is possible to produce tera-hertz radiation emission, which is important for practical application in Optical Engineerings.
author2	韓斌
author_facet	韓斌 Liu Chang-Chieh 劉昌杰
author	Liu Chang-Chieh 劉昌杰
spellingShingle	Liu Chang-Chieh 劉昌杰 The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method
author_sort	Liu Chang-Chieh
title	The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method
title_short	The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method
title_full	The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method
title_fullStr	The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method
title_full_unstemmed	The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method
title_sort	computation of double-quantum well energy level in silicon-germanium compound （si1-xgex） with numerical method
publishDate	2002
url	http://ndltd.ncl.edu.tw/handle/79918270965098710901
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The Computation of Double-Quantum Well Energy Level in Silicon-Germanium Compound （Si1-xGex） with Numerical Method

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