| Summary: | 碩士 === 義守大學 === 電子工程學系 === 90 === A main problem associated with piezoresistive pressure sensors is the cross sensitivity sensed among different temperature. The influence of temperature is manifested as a change in the span and offset of the sensor output. The output voltage and zero offset voltage of traditional piezoresistive pressure sensor under temperature variation have a large drift. The output result is also influenced. In this thesis, a new temperature compensation technique for a silicon pressure sensor is presented. We combine two sensors, the piezoresistive bridge and the compensation one, together to instead of the original single piezoresistive pressure sensor circuit. The experimental results show the improved output voltage and zero offset voltage drift. Besides, it covers a wider temperature and pressure range and reduces the prime cost of sensor. We also add the computer simulation analysis of ANSYS to realize the resistors location by stress analysis. In this experiment, we attempt many types of temperature and pressure environment to discuss the reaction and influence of the traditional and double bridge piezoresistive pressure sensors.
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