單一氮化鎵奈米線的歐姆接點製作及傳輸特性
碩士 === 國立中興大學 === 物理學系 === 90 === Abstract The main works in this thesis to explore how to pick up a single GaN nanowire from a cluster of GaN nanowires grown on Si substrate and measure the electric transport properities. Four GaN nanowire devices ranging from 45nm to 70nm i...
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| Format: | Others |
| Language: | zh-TW |
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2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44748763133448179961 |
| Summary: | 碩士 === 國立中興大學 === 物理學系 === 90 === Abstract
The main works in this thesis to explore how to pick up a single GaN nanowire from a cluster of GaN nanowires grown on Si substrate and measure the electric transport properities. Four GaN nanowire devices ranging from 45nm to 70nm in diameter were fabricated using electron-beam lithography and lift-off processes. Ti/Al electrodes were deposited on GaN nanowires and formed ohmic contacts after annealing in forming gas at 600℃ for 5min. According to its current-voltage（I-V） charaicteristic, we obtained the resistance value of the wire to be about 30 KΩ at room temperature. Lowering the temperature from 300K to 88K,the resistance of the wire increased from 22.6 KΩ to 196.8 KΩ. The activation energy of GaN nanowire was estimated to be about 0.06 eV by the temperature-resistance relationship.
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