The Development of RF Inductor Based on the Study of the Substrate Coupling

• Main Authors: Shuo-Mao Chen, 陳碩懋
• Other Authors: Yean-Kuen Fang
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/77150936420581948738

碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 90 === The Development of RF Inductor Based on the Study of the Substrate Coupling Shuo-Mao Chen＊, Yean-Kuen Fang＊＊, Wen-Kuan Yeh＊＊, Jason Lin＊＊, Ta-Hsun Yeh＊＊ Department of Electrical Engineering National Cheng Kung University Tainan, Taiwan, ROC Abstract Silicon is recognized as a fascinating material to meet the demand of high integration, low cost, and mature technique in integrated circuits for wireless communication applications. And the on-chip RF inductors without externally bonding wires have played an important role in SOC (System On Chip) designs. However, for the RF device in silicon chip, the substrate coupling has become as a noticeable issue between analog and digital portions of a mixed signal IC chip. Therefore, the development of the high Q RF inductor based on the studies of the substrate coupling becomes the major target in this paper. The substrate coupling means the coupling noise through substrate to cause interference with others. In this thesis, how to enhance the suppression of substrate coupling and decline noise source has been studied. Various suppression structures such as P+ guard ring and Deep-N-Well structures are proposed first to defense the substrate coupling after the characteristic analysis of the substrate coupling effectively. Then, a suspended inductor suitable for the demand of high Q RF inductor and low substrate coupling are developed. *The author **The advisor