Metamorphic Growth of the Heterojunction Buffer Layers by Low Pressure Metal-Organic Chemical Vapor Deposition
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 90 === InP-Based microwave devices have many advantages over GaAs-Based microwave devices, including the lack of aluminum, less surface recombination velocity(~103 cm/sec), small bandgap of InGaAs, high thermal conductivity of InP substrate (0.7 W-cm/K) and suitabl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52879182560802755418 |