Bond Orbital Model with Microscopic Interface Effect and its Application to Semiconductor Nanostructures
博士 === 國立成功大學 === 電機工程學系碩博士班 === 90 === Abstract The bond orbital model (BOM) is a very powerful method for theoretical calculating on the semiconductors and their heterostructures. This method is a link of the tight-binding and k•p method, while it combines the merit above two methods. The BOM co...
Main Authors: | Chun-Nan Chen, 陳俊男 |
---|---|
Other Authors: | Jih-Chen Chiang |
Format: | Others |
Language: | en_US |
Published: |
2002
|
Online Access: | http://ndltd.ncl.edu.tw/handle/bvhx62 |
Similar Items
-
Use Bond-Orbital Models to Study Wurtzite Semiconductor Band Structures
by: Wan-Tsang Wang, et al.
Published: (2004) -
Fabrication of nanostructure on GaAs/AlGaAs semiconductor system by atomic force microscope
by: Hung-Tao Chou, et al.
Published: (2001) -
Application of the scanning electron microscope to semiconductors
by: Shaw, A. M. B.
Published: (1969) -
Optoelectronic Properties of Semiconductor Nanostructures
by: Tzung-Te Chen, et al.
Published: (2008) -
A Study of Interface Between Metal/Amorphous Semiconductor/ Compound Semiconductor and Its Applications for MESFET
by: Yang Chun Yi, et al.
Published: (1993)