Investigation of metal/ferroelectric/metal/insulator/semiconductor Structure's Process and Properties
碩士 === 國立交通大學 === 電子工程系 === 90 === At the present time, the commercial 1T1C(1 transistor 1 capacitor) ferroelectric memory is a destructive readout. Our experiments here directly investigate the process conditions and characteristics of non-destructive structure. A sequence of parameter s...
Main Authors: | Lin Ming-Chao, 林明昭 |
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Other Authors: | T. Y. Tseng |
Format: | Others |
Language: | en_US |
Published: |
2002
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Online Access: | http://ndltd.ncl.edu.tw/handle/95885108760816896967 |
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