Electrical Properties of SrTiO3 as a Gate Dielectric and Model of Capacitance Measurement
碩士 === 國立交通大學 === 電子工程系 === 90 === The influences of the processing parameters on physical and electrical properties of SrTiO3 (STO) thin films deposited on Si were investigated. Nitrogen-incorporation method and repeated-spike-heating method were employed to improve the electrical proper...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/45742867421041415544 |