The Investigation of Reliability in PbZrTiO3 (PZT) Ferroelectric Capacitor
碩士 === 國立交通大學 === 電子物理系 === 90 === Non-volatile ferroelectric random access memories (FeRAMs) have the potential to replace current state-of-the-art non-volatile memories such as flash and EEPROMs because of their lower power consumption, lower writing voltage, faster writing speed, and b...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65460015780974235873 |