| Summary: | 碩士 === 國立東華大學 === 材料科學與工程學系 === 90 === Abstract
In this study, Regioregular Poly(3-hexylthiophene) (RR-P3HT) films were prepared by using spin-coating technique. The molecular structure of these films was discussed and the characteristics of the organic diodes and thin film transistors made by these films were investigated.
The molecular structure of these organic films was characterized by wide angle X-ray diffraction, UV-VIS absorption spectroscopy, and raman spectroscopy. As the concentration of RR-P3HT solution is increased and spinning speed is lowered，the structure order of RR-P3HT films will be better and the effective conjugate length will be longer and lamellar structures will increase. For the organic diode, the performance of device structure will be better as the electrodes were deposited upon the organic layer. ITO was the better material for electrodes.
For the organic thin film transistor, the transistor work obviously as it was fabricated by using 0.88wt% and 2wt% of RR-P3HT solution, and the mobility in the order of 10-3 cm2/Vs. There was no transistor performance as the device was fabricated using 0.05wt% of RR-P3HT solution.
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