Study on ultra low-k silicon oxide with nano-porous structure

• Main Authors: Hong-Ming Tsai, 蔡鴻明
• Other Authors: Ting-Chang Chang
• Format: Others
• Language: en_US
• Published: 2002
• Online Access: http://ndltd.ncl.edu.tw/handle/98601416940932963819

碩士 === 國立中山大學 === 物理學系研究所 === 90 === In this thesis, the leakage-mechanism after O2-plasma treatments was investigated. And the mechanism is transformed from Schottky emission into ionic conduction due to moisture uptake after porous silica film undergoes O2 plasma ashing. Besides, CMP process can to recover the damaged films by removed the degraded parts. From the result, we know that O2 plasma causing the bulky damage. Finally, the resistance of metal penetration of O2 plasma treated POSG is performed by utilizing BTS test. It was found that the moisture uptake in POSG films assisting metals in ionization process. Then, the penetrated metal ions in POSG film causes the leaky characters degraded.