Fabrication of GaN MESFET and measurement of characteristics

Fabrication of GaN MESFET and measurement of characteristics

碩士 === 國立清華大學 === 電子工程研究所 === 90 === We investigate the reliability of GaN metal semiconductor field effect transistor. The high quality GaN was grown by metal organic chemical vapor deposition (MOCVD). We used Ni/Au as a schottky gate and Ti/Al/Ti/Au as a drain source of GaN MESFET. It was found th...

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Main Authors: Yao-Yi Liu, 劉曜毅
Other Authors: Meng-Chyi Wu
Format: Others
Language:zh-TW
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/53573373206528669492
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spelling ndltd-TW-090NTHU04280342015-10-13T10:34:06Z http://ndltd.ncl.edu.tw/handle/53573373206528669492 Fabrication of GaN MESFET and measurement of characteristics 氮化鎵MESFET之研製與特性量測 Yao-Yi Liu 劉曜毅 碩士 國立清華大學 電子工程研究所 90 We investigate the reliability of GaN metal semiconductor field effect transistor. The high quality GaN was grown by metal organic chemical vapor deposition (MOCVD). We used Ni/Au as a schottky gate and Ti/Al/Ti/Au as a drain source of GaN MESFET. It was found that the performance of GaN MESFET was not changed after heated at 300℃ for 120m. No degradation of ohmic contact and schottky contact was occurred. The better reliability of GaN MESFET was demonstrated. Meng-Chyi Wu Lung-Chien Chen Wen-Hou Lan 吳孟奇 陳隆建 藍文厚 2002 學位論文 ; thesis 0 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 電子工程研究所 === 90 === We investigate the reliability of GaN metal semiconductor field effect transistor. The high quality GaN was grown by metal organic chemical vapor deposition (MOCVD). We used Ni/Au as a schottky gate and Ti/Al/Ti/Au as a drain source of GaN MESFET. It was found that the performance of GaN MESFET was not changed after heated at 300℃ for 120m. No degradation of ohmic contact and schottky contact was occurred. The better reliability of GaN MESFET was demonstrated.
author2 Meng-Chyi Wu
author_facet Meng-Chyi Wu
Yao-Yi Liu
劉曜毅
author Yao-Yi Liu
劉曜毅
spellingShingle Yao-Yi Liu
劉曜毅
Fabrication of GaN MESFET and measurement of characteristics
author_sort Yao-Yi Liu
title Fabrication of GaN MESFET and measurement of characteristics
title_short Fabrication of GaN MESFET and measurement of characteristics
title_full Fabrication of GaN MESFET and measurement of characteristics
title_fullStr Fabrication of GaN MESFET and measurement of characteristics
title_full_unstemmed Fabrication of GaN MESFET and measurement of characteristics
title_sort fabrication of gan mesfet and measurement of characteristics
publishDate 2002
url http://ndltd.ncl.edu.tw/handle/53573373206528669492
work_keys_str_mv AT yaoyiliu fabricationofganmesfetandmeasurementofcharacteristics
AT liúyàoyì fabricationofganmesfetandmeasurementofcharacteristics
AT yaoyiliu dànhuàjiāmesfetzhīyánzhìyǔtèxìngliàngcè
AT liúyàoyì dànhuàjiāmesfetzhīyánzhìyǔtèxìngliàngcè
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