Fabrication of GaN MESFET and measurement of characteristics
碩士 === 國立清華大學 === 電子工程研究所 === 90 === We investigate the reliability of GaN metal semiconductor field effect transistor. The high quality GaN was grown by metal organic chemical vapor deposition (MOCVD). We used Ni/Au as a schottky gate and Ti/Al/Ti/Au as a drain source of GaN MESFET. It was found th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2002
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53573373206528669492 |