Ultra-thin High k Al2O3 Gate Dielectric Prepared by Oxidation in Nitric Acid Followed by High Temperature Anneal
碩士 === 國立臺灣大學 === 電機工程學研究所 === 90 === As the density of transistors increases in single chip, the dimension of MOSFET decreases. The reduction of the thickness of gate dielectric will introduce an unacceptable large gate leakage current. To reduce the gate leakage current and maintain the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2002
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/45021082902733301372 |