Ultra-thin High k Al2O3 Gate Dielectric Prepared by Oxidation in Nitric Acid Followed by High Temperature Anneal
碩士 === 國立臺灣大學 === 電機工程學研究所 === 90 === As the density of transistors increases in single chip, the dimension of MOSFET decreases. The reduction of the thickness of gate dielectric will introduce an unacceptable large gate leakage current. To reduce the gate leakage current and maintain the...
Main Authors: | Jui-Feng Hsu, 徐瑞豐 |
---|---|
Other Authors: | Jenn-Gwo Hwu |
Format: | Others |
Language: | en_US |
Published: |
2002
|
Online Access: | http://ndltd.ncl.edu.tw/handle/45021082902733301372 |
Similar Items
-
Investigation of Ultra-thin Al2O3 High-k Gate Dielectrics Prepared by Shadow Evaporation of Aluminum Followed by Nitric Acid Oxidation for MOS Device
by: Jung-Chin Chiang, et al.
Published: (2007) -
An Investigation on the Properties of High-K Ultra-thin HfSiON Films as Gate Dielectric
by: Cheng-Chung Hsu, et al.
Published: (2009) -
An Investigation on the Properties of High-k Ultra-Thin HfO2 Film as Gate Dielectric
by: Ming-Te Chien, et al.
Published: (2005) -
An Investigation on the Properties of High-k Ultra-Thin HfSiO Film as Gate Dielectric
by: Mao-chan Huang, et al.
Published: (2009) -
Investigation of nano-scale high-K AL2O3 andHfO2 gate dielectrics prepared by nitric acid oxidation of metal films followed by high temperature anneal
by: Chih-Sheng Kuo, et al.
Published: (2004)