| Summary: | 碩士 === 國防大學中正理工學院 === 應用物理研究所 === 91 === ABSTRACT
In this paper, a systematic design procedure based on key factor analysis of the Q curve has been proposed. Crucial element parameters in equivalent circuits model correlated to geometrical structure dimensions and process conditions are derived. For design purpose, the combined key factors of low-frequency slope, high frequency slope, and self-resonant frequency that are used to determine Qmax and fQmax are identified as well. Additionally, the influence of crucial element parameters on key factors of Q curve has been revealed. The parameter of Ls plays an important role on low-frequency slope, high frequency slope, and self-resonant frequency. However, inductance is basically not an option for Qmax optimization due to the constraint placed by circuit designers. The other parameters shall be the sole way to increase low frequency slope, high frequency slope, and self-resonant frequency by process optimization. In this work, a high Q inductor with 4 nH which is a practical utility inductance with Q2.4 = 10 and Qmax = 13 by CMOS process optimization have been demonstrated step by step in this systematic design procedure. This promising technique of designing shall become a fast and accurate decision for future success of Si-based RFIC applications.
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