Crosstalk Analysis in DRAM Circuits

• Main Authors: I-Yu Tai, 戴翊祐
• Other Authors: Jau-Yien Lee
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/98444730721059746504

碩士 === 長庚大學 === 半導體科技研究所 === 91 === The density of dynamic random access memories (DRAM’s) has quadrupled every three years since their advent about 30 years ago. Developing this higher density has made them cheaper than other types of memories. Low power dissipation and fast access time have been obtained even with an increase in chip size for every generation. In this paper we present the results of a simulation study for the effects of crosstalk among DRAM wordlines and bitlines with regard to the future technology nodes predicted by 2001 ITRS roadmap. And we used an electromagnetic analysis software “RAPHAEL” produced by TMA. Co, to describe the 3-D architecture of DRAM circuit in the text for extracting the R, L, C parameters in the DRAM circuit.