Gate Dielectrics and Cell Membrane Studies for La2O3/ Si0.3Ge0.7 p-MOSFETs and Biologic Cells
碩士 === 中華大學 === 電機工程學系碩士班 === 91 === We have developed high K La2O3 gate dielectrics by a simple process using direct thermal oxidization of deposited La. The dielectric integrity improves as decreasing La2O3 thickness because of the applied low oxidation temperature. From the measured ca...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93173986312247825936 |