The Fabrication Study of Metal - Ga2O3(Gd2O3) - Semiconductor Field Transistors

• Main Authors: Tien-Yu Lin, 林鐵豫
• Other Authors: Hui-Ling Kao
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/ybj6sd

碩士 === 中原大學 === 電子工程研究所 === 91 === Abstract The GaAs device applications have become very critical due to the requirement for global communication industrial growth. Depletion mode-GaAs MOSFETs have a lot advantages over other GaAs based FETs such as MESFET. However, the critical issue of GaAs MOSFET is lack of reliable gate oxide layer. Recently, Dr. M. Hong, etal in Lucent Bell Laboratories have developed the growth of Ga2O3(Gd2O3) with a midgap interface state density and an interface recombination velocity of 1010eV-1cm-2 and 4000cm/sec on GaAs substrates. The main goal of this thesis is to fabricate and characterize GaAs Metal Oxide Semiconductor Field Effect Transistors using rear-earth oxide provided by Hong as gate dielectrics. We use SRIM to simulate the oxygen ion implantation and MEDICI to simulate the device characteristics such as I-V and Vth of D-mode MOSFETs. Wet etching Ga2O3(Gd2O3) dielectrics has been investigated. Oxygen implantation and wet etching were used to fabricate for MOSFET. The electrical performance of GaAs MOSFETs with various Ohmic contacts is presented, and the results show consistency to the theoretical trend.