Fabrication of silicon germanium narrow structures
碩士 === 國立中興大學 === 物理學系 === 91 === This thesis is about the process of fabricating a narrow channel on Si/SiGe heterostructures containing a heavily doped boron layer. We use the photolithography technique for the Hall pattern and the e-beam lithography technique to define the narrow channel. Because...
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| Format: | Others |
| Language: | zh-TW |
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2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/80570725259106315691 |