| Summary: | 碩士 === 國立中興大學 === 電機工程學系 === 91 === In the wireless communications, the radio frequency (RF) MEMS switches will be used to replace the traditional solid-state devices such as the PIN diode and the field effect transistor by their good electromagnetic characteristics at high frequency. The advantages of the RF switches using MEMS technology include the low insertion loss, the high isolation, and the high bandwidth. The studies of the RF MEMS switches were devoted to the fabrication and the measurement of devices, but less analysis of the electromagnetic characteristics in the past. The thesis focuses on the S-parameter at different resistances, inductances, and capacitances of shunt capacitive RF MEMS switches. And we predict the switching time and the operating voltage in ideal condition of the RF MEMS switches. The results can provide the structure design and characteristic estimation of the RF MEMS switches at different frequencies application. It can avoid wasting on try and error and save time.
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