The properities of transparent ductivite oxides ITO deposited on flexible substrate

• Main Authors: Szu-Chen Chen, 陳思成
• Other Authors: Shih-Chin Lee
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/81513409360726131934

碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 91 === Transparent and conductive ITO thin film were prepared on plastic substrate by RF magnetron sputtering. The relationship between structure characteristics and optical as well as electrical properties was investigated in this study. For producing the LCD (Liquid Crystal Displays), the transparent conductive films are generally deposited on the glass. Because plastic substrates have the advantages of low cost, light-weighted, and rugged characteristics, it was considered as the materials of the next period for the substrate of LCD. While in production process and in practical use, the problems of heat resistance ,and thermal expansion must be overcome. We have introduced a new technology into the sputtering of indium-tin oxide (ITO) films. The techniques process are called “ intermittent thin film growth ”by us .During deposition process ,we make the substrate rotated and therefore increasing thin film cooling time .By this way , we were deposited ITO thin film on the plastic substrate in high RF power deposition because high thin film stresses are induced and resulting in peeling of a film. Whatever the intermittent thin film growth can avoid the deformation or the curl of the plastic substrates. From the experimental results, it is found that the ITO thin film and plastic substrate will be damaged by the high substrate temperature and high residual stress when deposition times over 5 min in continuous deposition. But use the “ thin film intermittent growth ”, it is found that the ITO thin film can deposited on plastic substrate successfully. The XRD diffraction shows that the ITO thin film have a micro-grain structure and it can etch faster than polycrystalline thin film in etching process. In this study, we could get the lowest resistivity of 5.75 x 10-4Ω‧cm and over 80% of the average transmittance in the visible region at the condition of intermittent deposition.