Integration of Light-Emitting Diode and Field-Effect Transistor Based on Conjugated Polymers

• Main Authors: Mei-Feng Tseng, 曾美鳳
• Other Authors: Prof. Hsin-Fei Meng
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/38216707006318795927

碩士 === 國立交通大學 === 物理研究所 === 91 === The thesis is aimed at integration of polymer optoelectronic and electronic devices. We tried to combine both thin-film transistor (TFT) and polymer light emitting diodes (PLED) and study their basic characteristics respectively. But the LED and FET structure share the same semiconductor layer, avoiding the difficulties of polymer pattering .We search for the possible materials suitable simultaneously for carrier transport layer in TFT and the hole-transport layer (HTL) ,which decreases the hole injection barrier from the anode to emission layer in PLED. We find Poly(3-hexylthiophe) is a good choice. And we will discuss the characteristics of PLED using as HTL .Due to the high horizontal mobility of P3HT in thin-film transistor ,the TFT can provide enough current to drive the PLED .