Studies on InGaP Heterojunction Bipolar Transistors and Pseudomorphic High Electron Mobility Transistors.
博士 === 國立交通大學 === 電子工程系 === 91 === The InGaP Heterojunction Bipolar Transistor (HBT) and Pseudomorphic High Electron Mobility Transistor (PHEMT) are investigated in this dissertation. The discussions of these two type transistors are divided in two parts. Part I is the HBT device and Part...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95254668177265623671 |