The Defect Structure of GaAs on Si Substrate Grown by Molecular Beam Epitaxy
碩士 === 國立中山大學 === 電機工程學系研究所 === 91 === In this study, a thermodynamic model was built to apply to discuss the defect structure of GaAs epitaxial film grown on Si substrate by MBE, and it was specially focus on the GaAs/Si growth process. . It includes the initial layer, thermal treatment, epitaxial...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99775524994846282026 |