| Summary: | 碩士 === 國立中山大學 === 電機工程學系研究所 === 91 === The Ta-modified niobate lithium [LiNb1-xTaxO3, abbreviated to LNT] thin films were deposited on Pt/Ti/SiO2/Si substrates by spin coating with sol-gel technology and rapid thermal processing in this thesis. 1,3 propanediol was used as solvent to minimize the number of cycles of spin coating and drying processes to obtain the desired thickness of thin film. By changing the Ta content (x=0~1), the effects of various processing parameters on the thin films growth are studied. The effects of various Ta content on the response of pyroelectric IR detector devices are studied also.
Experimental results reveal that the Ta content will influence strongly on grain size, dielectricity, ferroelectricity and pyroelectricity of LNT thin films. With the increase of Ta content, the grain size of LNT thin film decreases slightly, and highly c-axis orientated LNT films have been obtained for x=0.2. With the increase of Ta content, The relative dielectric constant of LNT thin film increases from 33 up to 62. The dielectric loss (tand) increases from 0.00374 to 0.00686,Coercive Field (Ec) decreases from 81.09KV/cm to 32.07KV/cm, and Remanent polarization (Pr) decreases from 8.48 mC/cm2 to 2.2 mC/cm2, pyroelctric coefficient (g) increases from 2.76´10-8 C/cm2K up to 4.51´10-8 C/cm2K with an increase of Ta content. In addition, the results also show that the LNT thin film possesses the largest figures of merit Fv (2.66×10-10 Ccm/J) and Fm (2.57×10-8 Ccm/J) at the heating temperature of 700℃ and Ta content of 20mol%. The voltage responsivities (Rv) measured at 70 Hz has a largest value of 7020 V/W with the Ta content of 20mol%. The specific detectivity (D*) measured at 200 Hz has the maximum value of 7.76×107 cmHz1/2/W with the Ta content of 20mol%. The results show that LNT(20) pyroelectric thin film detector exists both the maximums of voltage responsivity and specific detecivity. Therefore, optimizing the conditions of this study, LNT(20) thin film will be the most suitable for IR detector application.
|
|---|
