Analysis of Flow Field and Operating Parameters for Poly-silicon RTCVD Reactor
碩士 === 國立中山大學 === 機械與機電工程學系研究所 === 91 === The development and advancement of microelectronics technology have been dramatically. The time and cost, for research and optimization of process and equipment, can be saved by using flow simulation. The governing equations of flow field, inside chemical va...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11766936009282651868 |