Depth Profiling Analysis of Transition Metals in Thermally Treated Silicon Wafer
碩士 === 國立清華大學 === 原子科學系 === 91 === Abstract Metallic contamination in silicon wafer is a well-known cause of device failure and performance degradation in semiconductor manufacturing. During high temperature processing, trace transition metals can diffuse rapidly into silicon substrates...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23448562154642735508 |