Optical Transitions of (III-V-N) Semiconductor Laser structures
碩士 === 國立臺灣師範大學 === 物理研究所 === 91 === We have investigated (III-V-N) semiconductor laser structures grown by Molecular Beam Epitaxy (MBE) using photoreflectance and photoluminescence at various temperatures. The investigated laser structures all contain quantum well, and some of them hav...
Main Author: | 吳政翰 |
---|---|
Other Authors: | 陸健榮 |
Format: | Others |
Language: | zh-TW |
Published: |
2003
|
Online Access: | http://ndltd.ncl.edu.tw/handle/29062733618665074502 |
Similar Items
Similar Items
-
III-V Laser Material Grown by MOCVD and Optical Field Analysis of Semiconductor Lasers
by: Shen-Renn Chiou, et al.
Published: (1996) -
III-V Semiconductor Lasers and Detectors
by: Chiu, Liew-Chuang
Published: (1983) -
The development of III-V single-mode lasers based on semiconductor optical amplifier heterostructures
by: Markina-Khusid, Aleksandra
Published: (2014) -
Exploring Optical Nonlinearities in III-V Semiconductors
by: Odungide, Mfon
Published: (2019) -
Optical nonlinearities in III-V semiconductor waveguides
by: Goodwill, Dominic John
Published: (1991)