砷化氮鎵/砷化鎵三井量子結構的光譜研究
碩士 === 國立臺灣師範大學 === 物理研究所 === 91 === We have investigated the interband transitions in GaNAs/GaAs triple quantum wells by photoluminescence and photoreflectance. The samples used in our experiments were grown by Metal-Organic Chemical Vapor Deposition. The photoreflectance spectral peaks...
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| Format: | Others |
| Language: | zh-TW |
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2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/74528074475260312265 |
| Summary: | 碩士 === 國立臺灣師範大學 === 物理研究所 === 91 === We have investigated the interband transitions in GaNAs/GaAs triple quantum wells by photoluminescence and photoreflectance. The samples used in our experiments were grown by Metal-Organic Chemical Vapor Deposition. The photoreflectance spectral peaks of the quantum well transitions were blue shifted as the temperature decreased.
In the photoluminescence, the spectral peaks were red shifted as the temperature decreased below 50 K. The anomalous red shift may be due to the carrier localization at potential fluctuations.
The interband transition energies for GaNAs/GaAs QWs agree with observed spectral peaks positions if a type-Ⅰ band line QWs is assumed. The influence of rapid thermal annealing on the quantum well transition energies is also analyzed and compared with physical models.
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