The optical and electrical properties of InAs/GaAs quantum dot infrared photodetector
碩士 === 國立臺灣大學 === 電子工程學研究所 === 91 === The uncapped and capped layers self-assemble QDs will be investigated in PL, SEM measurement. InGaAs phase separation phenonmenon is observed. Theoretical calculations were performed to investigate the stress between the capped layer and surface QD. S...
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96292695535947036111 |