Growth and Study of Indium Nitride by Organometallic Vapor Phase Epitaxy

• Main Authors: Fu-Hsiang Yang, 楊富祥
• Other Authors: Ying-Jay Yang
• Format: Others
• Language: en_US
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/61993463279306122511

博士 === 國立臺灣大學 === 電機工程學研究所 === 91 === InGaN/GaN based visible light-emitting diodes have demonstrated great applications in display, illumination and indication. However, the study in InN and In-rich InxGa1-xN films have experienced less progress due to difficulties in obtaining high quality films. The growth and property study of InN are of particular importance with its potential contribution to the quality of In-rich InxGa1-xN alloy and the performance of green GaN-based LEDs. Meanwhile, InN is also promising for high efficient solar cell and high-speed transistors. To improve the quality of InN films, we studied the effects of NH3 preheating on the growth of InN for the purpose of increasing NH3 cracking efficiency and InN vertical growth rate. Then, the effects of high-speed reactant gas on the InN growth were explored. We found that high-speed reactant gas is an effective way to improve the growth mode of InN. Two-dimensional growth of InN with very good surface morphology and good XRC-FWHM has been achieved, indicating good quality of InN. Low temperature InN buffer layer was used to achieve single crystalline InN film with flat surface morphology. Furthermore, lateral epitaxial overgrowth was performed to further improve the quality of InN. This is the first report on InN lateral growth. Two growth modes of InN stripes and continuous film formation due to the coalescing of InN stripes have been achieved in this thesis work.