| Summary: | 碩士 === 國立臺灣大學 === 機械工程學研究所 === 91 === In this thesis, a high-speed plasma switch, which can be used for military application is designed and fabricated by MEMS technology. Based on the principle of plasma, we apply small voltage to the device for heating polysilicon resistance in order to produce gaseous molecules. The molecules that ionized by a huge electrical field will generate the plasma to trigger a large current to communicate the circuit.
In design aspect, this thesis achieves the simulation and analysis about working principle of high-speed plasma switch, including the time constant of conducting and heating polysilicon, the relationship between breakdown voltage and device scale, the geometry and process doping of structure resistance effecting the device response time, and thermal analysis by simulation software.
In fabrication aspect, this thesis accomplishes the choosing of proper material, the design of mask layout, the scheme for processing steps, and the fabrication of high-speed plasma switch. The equipment for the device measurement also be set up to verify the functional results, including polysilicon evaporation, breakdown voltage, and the response time about the packaged device.
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