Preparation of SiC nanorods and nanowires via reaction of carbon nanotubes on silicon wafers

• Main Authors: Wei-Po Kuo, 郭文博
• Other Authors: Chien-Chong Chen
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/24847050187094000994

碩士 === 國立中正大學 === 化學工程研究所 === 92 === Silicon carbide (SiC) nanorods have been synthesized via reaction of carbon nanotubes (CNT) on silicon wafers. The reaction was carried out by a heating tungsten coil which placed 7.0 mm above the reactant. The X-ray diffraction (XRD), X-ray Photoelecton Spectroscopy (XPS) and Laser Raman scattering Spectroscopy results confirmed the formation of SiC. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) results showed that two kinds morphology of SiC nanorods. (1) The first kind of morphology is tack-like silicon carbide nanorods. The nanorods have a non-uniform diameter, and there is a SiC spherical head on the tip. The diameter of the spherical head is about 100nm, and the length of the nanorod is about 1µm. Moreover, the diameter of the body is inclined to decrease with the direction of the axis; (2) the second kind of morphology is the straight silicon carbide nanorod. The diameter of the straight nanorod is uniform and isn’t inclined to become small with the direction of axis. The diameter of the straight nanorod is about 40nm, and the range of the length is from 400 to 500nm. Furthermore, the diameter and the length of SiC nanorods is proportion to sustained heating time. There are two possibilities of mechanism to form SiC nanorods: (Ⅰ) using CNT as template, then CNTs covered with fusing Si to form SiC nanorods. (Ⅱ) it also using CNTs as template, then fusing Si enter CNT to form SiC nanorods. In addition, high-resolution electron microscopy (HREM) results showed that Si nanorods. The growth of the Si nanorod may result from the chemical reaction between a layer of silicon oxide on the silicon wafer and the generation of silicon carbide.