| Summary: | 碩士 === 義守大學 === 材料科學與工程學系 === 92 === In order to reduce the PCB dielectric, confer whole dielectric characters, machinery characters, and preparing process. Nano-size silica has porous structure；the air and in vacuum the dielectric constant are 1. Using the character to reduce the dielectric constant substantially in PCB. Besides, to confer the effect of epoxy system additive nano-porous silica.
The dielectric constant is reduced by the increasing nano-porous silica content. In low content rate of nano-porous silica, epoxy has nice preparing condition. In epoxy system, the dielectric constant reduce 0.96 from pure epoxy to 5phr rate(3.28~2.32). In PCB system, the dielectric constant reduce 0.15 from pure epoxy to 5phr rate(4.38~4.23). In PCB manufacturing process, we use various instruments to find the mathematics. For example, we can find the range of solvent vaporizing(45OC~80OC), using this data can design baking temperature. In DSC data, it can known the temperature which epoxy harden is 175 OC.
In experiment, the dielectric constant of nano-porous silica, using Mixture rule equation to calculate it. Finally, calculating the dielectric constant of nano-porous silica is 1.545.
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